Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: 60 V
Continuous Drain Current
: 4 A
Gate-Source Breakdown Voltage
: +/- 16 V
Package / Case
: SOT-223
Configuration
: Single Dual Drain
Resistance Drain-Source RDS (on)
: 100 mOhms
Features: TYPICAL RDS(on) = 0.07
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
LOW THRESHOLD DRIVE
Application DC-DC & DC-AC COVERTERS
DC MOTOR CONTROL (DISK DRIVERS, etc.)
SYNCHRONOUS RECTIFICATIONSpecifications
| Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
60 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k ) |
60 |
V |
| VGS |
Gate- source Voltage |
± 16 |
V |
| ID() |
Drain Current (continuos) at TC = 25
|
4
|
A
|
| ID |
Drain Current (continuos) at TC = 100 |
2.9 |
A |
| IDM() |
Drain Current (pulsed) |
16 |
A |
| PTOT |
Total Dissipation at TC = 25 |
3.3 |
W |
|
Derating Factor |
0.026 |
W/ |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
10 |
V/ns |
| EAS(2) |
Single Pulse Avalanche Energy |
200 |
mJ |
| Tstg |
Storage Temperature |
-55 to 150 |
|
| Tj |
Max. Operating Junction Temperature |
-55 to 150 |
|
(``) Pulse width limited by safe operating area.(`) Current limited by the package (1) ISD 3A, di/dt 150 A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting Tj = 25 oC, ID = 4A, VDD = 30V
DescriptionThis Power MOSFET STN3NF06L is the latest development of STMicroelectronis unique "Single Feature Size™"strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Parameters: | Technical/Catalog Information | STN3NF06L |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 1.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 340pF @ 25V |
| Power - Max | 3.3W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 9nC @ 5V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STN3NF06L
STN3NF06L
497 3177 1 ND
49731771ND
497-3177-1
|
STN3NF06L Data Sheet
