STN4NF03L

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 16 V
Package / Case : SOT-223
Resistance Drain-Source RDS (on) : 50 mOhms
Configuration : Single Dual Drain
Continuous Drain Current : 6.5 A


Features:

TYPICAL RDS(on) = 0.039
LOW THRESHOLD DRIVE


Application

DC-DC & DC-AC CONVERTERS
DC MOTOR CONTROL (DISK DRIVES, etc.)
SYNCHRONOUS RECTIFICATION


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain-gate Voltage (RGS = 20 k )	30	V
VGS	Gate- source Voltage	±16	V
ID	Drain Current (continuos) at TC = 25	6.5	A
ID	Drain Current (continuos) at TC = 100	4.5	A
IDM()	Drain Current (pulsed)	26	A
PTOT	Total Dissipation at TC = 25	3.3	W
	Derating Factor	0.026	W/
EAS (1)	Single Pulse Avalanche Energy	200	mJ
Tstg	Storage Temperature	55 to 175
Tj	Max. Operating Junction Temperature	55 to 175

() Pulse width limited by safe operating area
(1) Starting T_j=25°C, I_D=6.5A, V_DD=15V


Description

This Power Mosfet STN4NF03L is the latest development of STMicroelectronics unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STN4NF03L
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	6.5A
Rds On (Max) @ Id, Vgs	50 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	330pF @ 25V
Power - Max	3.3W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	9nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STN4NF03L STN4NF03L 497 4525 1 ND 49745251ND 497-4525-1