Transistors Bipolar (BJT) POWER MOSFET
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 30 V |
| Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 3 A |
| DC Collector/Base Gain hfe Min : | 100 at 10 mA at 2 V | Configuration : | Single Dual Collector Triple Emitter |
| Maximum Operating Frequency : | 100 MHz | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | SMD/SMT | Package / Case : | SOT-223 |
| Packaging : | Reel |
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage (IE = 0) | -60 | V |
| VCEO | Collector-Emitter Voltage (IB = 0) | -60 | V |
| VEBO | Emitter-Base Voltage (IC = 0) | -5 | V |
| IC | Collector Current | -3 | A |
| ICM | Collector Peak Current (tp < 5 ms) | -6 | A |
| Ptot | Total Dissipation at Tamb = 25 | 1.6 | W |
| Tstg | Storage Temperature | -65 to 150 | |
| Tj | Max. Operating Junction Temperature | 150 |
The device STN790A is manufactured in low voltage PNP Planar Technology by using a "Base Island"layout.
The resulting Transistor STN790A shows exceptional high gain performance coupled with very low saturation voltage.
| Technical/Catalog Information | STN790A |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Current - Collector (Ic) (Max) | 3A |
| Power - Max | 1.6W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 2V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 20mA, 2A |
| Frequency - Transition | 100MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| Packaging | Digi-Reel? |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STN790A STN790A 497 4366 6 ND 49743666ND 497-4366-6 |