Features: TYPICAL RDS(on) = 0.055 APPLICATION ORIENTED CHARACTERIZATIONApplicationHIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Voltage (RGS = 20 k ) 100 V VGS G...
STN7NF10: Features: TYPICAL RDS(on) = 0.055 APPLICATION ORIENTED CHARACTERIZATIONApplicationHIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit VDS D...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 100 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 100 | V |
| VGS | Gate- source Voltage | ± 20 | V |
| ID | Drain Current (continuos) at TC = 25 |
5 | A |
| ID | Drain Current (continuos) at TC = 100 | 3.4 | A |
| IDM() | Drain Current (pulsed) | 20 | A |
| PTOT | Total Dissipation at TC = 25 | 3.3 | W |
| Derating Factor | 0.026 | W/ | |
| Tstg | Storage Temperature | 55 to 150 | |
| Tj | Max. Operating Junction Temperature | 55 to 150 |
This Power MOSFET STN7NF10 series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate
charge drive requirements.