Transistors Switching (Resistor Biased) Medium current Hi perform Lo Vltg NPN
STN888: Transistors Switching (Resistor Biased) Medium current Hi perform Lo Vltg NPN
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| Configuration : | Single | Transistor Polarity : | PNP |
| Mounting Style : | SMD/SMT | Package / Case : | SOT-223-4 |
| Collector- Emitter Voltage VCEO Max : | 30 V | Continuous Collector Current : | 5 A |
| Power Dissipation : | 1.6 W | Maximum Operating Temperature : | + 150 C |
| Packaging : | Reel |
|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage (IE = 0) |
-60 |
V |
|
VCEO |
Collector-Emitter Voltage (IB = 0) |
-30 |
V |
|
VEBO |
Emitter-Base Voltage(IC = 0) |
-6 |
V |
|
IC |
Collector Current |
-5 |
A |
|
ICM |
Collector Peak Current (tp < 5 ms) |
-10 |
A |
|
Ptot |
Total Dissipation at Tamb = 25 |
1.6 |
W |
|
Tstg |
Storage Temperature |
-65 to 150 |
|
|
Tj |
Max. Operating Junction Temperature |
150 |
The device STN888 is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout.The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.
| Technical/Catalog Information | STN888 |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Current - Collector (Ic) (Max) | 5A |
| Power - Max | 1.6W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 1V |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 250mA, 5A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| Packaging | Digi-Reel? |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STN888 STN888 497 6202 6 ND 49762026ND 497-6202-6 |