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STP08IE120F4

IGBT Transistors PWR BIP/S.SIGNAL

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SeekIC No. : 00144077 Detail

STP08IE120F4: IGBT Transistors PWR BIP/S.SIGNAL

STP08IE120F4 Data Sheet

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Part Number:
STP08IE120F4
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Packaging : Tube    

Description

Configuration :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging : Tube


Features:

High voltage / high current Cascode configuration
Low equivalent on resistance
very fast-switch up to 150 kHz
Squared RBSOA up to 1200V
Very low Ciss driven by RG = 47
Very low turn-off cross over time


Application

Aux SMPS for three phase mains


Specifications

Symbol Parameter Value Unit
VCS(SS) Collector-source voltage (VBS = VGS = 0 V) 1200 V
VBS(OS) Base-source voltage (IC = 0, VGS = 0 V) 30 V
VSB(OS) Source-base voltage (IC = 0, VGS = 0 V) 17 V
VGS Gate-source voltage ± 17 V
IC Collector current 8 A
ICM Collector peak current (tP < 5ms) 24 A
IB Base current 6 A
IBM Base peak current (tP < 5ms) 12 A
Ptot Total dissipation at Tc = 25°C 21 W
Tstg Storage temperature -40 to 150 °C
TJ Max. operating junction temperature 150 °C



Description

The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.

STP08IE120F4 is designed for use in Gate Driven based topologies.




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