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STP30N20

MOSFET Power MOSFET

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SeekIC No. : 00161915 Detail

STP30N20: MOSFET Power MOSFET

STP30N20 Data Sheet

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Part Number:
STP30N20
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.065 Ohms Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.065 Ohms


Parameters:

Technical/Catalog InformationSTP30N20
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs75 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 1597pF @ 25V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs38nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP30N20
STP30N20
497 5129 5 ND
49751295ND
497-5129-5



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