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STP30NE03L

Features: TYPICAL RDS(on) = 0.028 100% AVALANCHE TESTED LOW GATE CHARGE LOW THRESHOLD DRIVEApplicationDC MOTOR CONTROL DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value Unit STP16NB25 STP16NB25FP VDS Drain-source Voltage (VGS = 0) 30 ...

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SeekIC No. : 004508386 Detail

STP30NE03L: Features: TYPICAL RDS(on) = 0.028 100% AVALANCHE TESTED LOW GATE CHARGE LOW THRESHOLD DRIVEApplicationDC MOTOR CONTROL DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATIONSpecifications Sym...

STP30NE03L Data Sheet

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Part Number:
STP30NE03L
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.028
100% AVALANCHE TESTED
LOW GATE CHARGE
LOW THRESHOLD DRIVE


Application

 DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION


Specifications

Symbol Parameter Value Unit
STP16NB25 STP16NB25FP
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain-gate Voltage (RGS = 20 k ) 30 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuos) at TC = 25
 30
 17 A
ID Drain Current (continuos) at TC = 100 21 12 A
IDM() Drain Current (pulsed) 120 68 A
PTOT Total Dissipation at TC = 25 70 25 W
  Derating Factor 0.47 0.17 W/
VISO Insulation Withstand Voltage (DC) ----- 2000 V
Tstg Storage Temperature 65 to 175
Tj Max. Operating Junction Temperature 175
(•) Pulse width limited by safe operating area


Description

This STP30NE03L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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