STP30NE06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.042 Ohms


Features:

 TYPICAL R_DS(on) = 0.042  
AVALANCHERUGGED TECHNOLOGY
100% AVALANCHE TESTED
175oC OPERATING TEMPERATURE
HIGH dV/dt CAPABILITY
APPLICATIONORIENTED CHARACTERIZATION


Application

DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION


Specifications

Symbol	Parameter	Value		Unit
		STP30NE06	STP30NE06FP
VDS	Drain-source Voltage (VGS = 0)	60		V
VDGR	Drain-gate Voltage (RGS = 20 k )	60		V
VGS	Gate- source Voltage	±20		V
ID	Drain Current (continuos) at TC = 25	30	17	A
ID	Drain Current (continuos) at TC = 100	21	12	A
IDM()	Drain Current (pulsed)	120	68	A
PTOT	Total Dissipation at TC = 25	80	30	W
	Derating Factor	0.53	0.2	W/
VISO	Insulation Withstand Voltage (DC)	-----	2000	V
dV/dt	Peak Diode Recovery voltage slope	7		V/ns
Tstg	Storage Temperature	65 to 175
Tj	Max. Operating Junction Temperature	75

(•) Pulse width limited by safe operating area  ( 1) I_SD 30 A, di/dt 300 A/ms, V_DD V_(BR)DSS, T_j T_JMAX


Description

This STP30NE06 Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.