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STP30NE06FP

Features: TYPICAL RDS(on) = 0.042 AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATIONORIENTED CHARACTERIZATIONApplicationDC MOTOR CONTROLDC-DC & DC-AC CONVERTERSSYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value Un...

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SeekIC No. : 004508388 Detail

STP30NE06FP: Features: TYPICAL RDS(on) = 0.042 AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATIONORIENTED CHARACTERIZATIONApplicationDC MOTOR CONTROLDC...

STP30NE06FP Data Sheet

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Part Number:
STP30NE06FP
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.042  
AVALANCHERUGGED TECHNOLOGY
100% AVALANCHE TESTED
175oC OPERATING TEMPERATURE
HIGH dV/dt CAPABILITY
APPLICATIONORIENTED CHARACTERIZATION


Application

DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION


Specifications

Symbol Parameter Value Unit
STP30NE06 STP30NE06FP
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k ) 60 V
VGS Gate- source Voltage ±20 V
ID Drain Current (continuos) at TC = 25
 30
 17 A
ID Drain Current (continuos) at TC = 100 21 12 A
IDM() Drain Current (pulsed) 120 68 A
PTOT Total Dissipation at TC = 25 80 30 W
  Derating Factor 0.53 0.2 W/
VISO Insulation Withstand Voltage (DC) ----- 2000 V
dV/dt Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature 65 to 175
Tj Max. Operating Junction Temperature 75
(•) Pulse width limited by safe operating area  ( 1) ISD 30 A, di/dt 300 A/ms, VDD V(BR)DSS, Tj TJMAX


Description

This STP30NE06FP Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.




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