STP30NE06L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.05 Ohms


Features:

 TYPICAL R_DS(on) = 0.035  
 100% AVALANCHE TESTED
 LOW GATE CHARGE
 APPLICATIONORIENTED CHARACTERIZATION


Application

 DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION


Specifications

Symbol	Parameter	Value		Unit
		STP30NE06L	STP30NE06LFP
VDS	Drain-source Voltage (VGS = 0)	60		V
VDGR	Drain-gate Voltage (RGS = 20 k )	60		V
VGS	Gate- source Voltage	±20		V
ID	Drain Current (continuos) at TC = 25	30	17	A
ID	Drain Current (continuos) at TC = 100	21	12	A
IDM()	Drain Current (pulsed)	120	68	A
PTOT	Total Dissipation at TC = 25	80	30	W
	Derating Factor	0.53	0.2	W/
VISO	Insulation Withstand Voltage (DC)	-----	2000	V
Tstg	Storage Temperature	65 to 175
Tj	Max. Operating Junction Temperature	175

(•) Pulse width limited by safe operating area


Description

This STP30NE06L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.