STP30NF10

MOSFET N-Ch 100 Volt 35 Amp

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SeekIC No. : 00148149 Detail

STP30NF10: MOSFET N-Ch 100 Volt 35 Amp

floor Price/Ceiling Price

US $ .5~.83 / Piece | Get Latest Price
Part Number:
STP30NF10
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.83
  • $.68
  • $.57
  • $.5
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 45 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 45 mOhms


Application

 HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL



Specifications

Symbol
Parameter
Value
Unit
STP10NK80Z
STP10NK80ZFP
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS = 20 k)
100
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25
35
18
A
ID

Drain Current (continuous) at Tc = 100
25
13
A
IDM(`)
Drain Current (pulsed)
140
72
A
PTOT
Total Dissipation at Tc = 25
115
30
W
Derating Factor
0.77
0.2
W/
dv/dt (1)
Peak Diode Recovery voltage slope
28
V/ns
EAS (2)
Single Pulse Avalanche Energy
275
MJ
VISO
Insulation Withstand Voltage (DC)
2000
V
Tstg
Storage Temperature
-55 to 175

Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area (1)ISD30A, di/dt400A/µs, VDD(BR)DSS, Tj TJMAX
2) Starting Tj = 25 oC, ID = 15A, VDD= 30V


Description

This STP30NF10 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTP30NF10
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C35A
Rds On (Max) @ Id, Vgs45 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 1180pF @ 25V
Power - Max115W
PackagingTube
Gate Charge (Qg) @ Vgs55nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP30NF10
STP30NF10
497 7520 5 ND
49775205ND
497-7520-5



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