STP30NM30N

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.09 Ohms
Drain-Source Breakdown Voltage : 300 V


Features:

·  Worldwide lowest gate charge
·  High dv/dt avalanche capabilities
·  Low input capacitance
·  Low gate resistance


Application

Switching application


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source voltage (VGS = 0)	300	V
VGS	Gate- source voltage	± 20	V
ID	Drain current (continuous) at TC = 25°C	30	A
ID	Drain current (continuous) at TC = 100°C	18.5	A
IDM	Drain current (pulsed)	120	A
PTOT	Total dissipation at TC = 25°C	160	W
	Derating factor	1.28	W/°C
dv/dt	Peak diode recovery voltage slope	18	V/ns
Tj Tstg	Operating junction temperature Storage temperature	-65 to 150	°C

Description

This 300V Power MOSFET STP30NM30N with a new advanced layout brings all unique advantages of MDmesh™ technology to medium voltages. The device exhibits worldwide lowest gate charge for any given on-resistance. Its use is therefore ideal as primary side switch for DC-DC converters as well as for switch mode power supply allowing higher efficiencies and system miniaturization

Parameters:

Technical/Catalog Information	STP30NM30N
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	90 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	2500pF @ 50V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	75nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP30NM30N STP30NM30N 497 7521 5 ND 49775215ND 497-7521-5