STP35NF10

MOSFET N-Ch 100 Volt 40 Amp

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SeekIC No. : 00151394 Detail

STP35NF10: MOSFET N-Ch 100 Volt 40 Amp

floor Price/Ceiling Price

US $ .55~.91 / Piece | Get Latest Price
Part Number:
STP35NF10
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.91
  • $.76
  • $.62
  • $.55
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 35 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 40 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 35 mOhms


Application

HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS = 20 k)
100
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25
40
A
ID Drain Current (continuous) at Tc = 100 28 A
IDM(`)
Drain Current (pulsed)
160
A
PTOT
Total Dissipation at Tc = 25
115
W
Derating Factor
0.77
W/
EAS (2)
Gate source ESD(HBM-C=100pF, R=1.5KW)
200
mJ
dv/dt (1)
Peak Diode Recovery voltage slope
13
V/ns
Tstg
Storage Temperature
-55 to 150
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area (1)ISD35A, di/dt 300A/µs, VDD32V(, Tj TJMAX
(2) Starting Tj = 25 , ID = 20A, VDD = 80V


Description

This  STP35NF10Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.




Parameters:

Technical/Catalog InformationSTP35NF10
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs35 mOhm @ 17.5A, 10V
Input Capacitance (Ciss) @ Vds 1550pF @ 25V
Power - Max115W
PackagingTube
Gate Charge (Qg) @ Vgs55nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP35NF10
STP35NF10
497 2645 5 ND
49726455ND
497-2645-5



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