STP36N06

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220
Continuous Drain Current : 36 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.04 Ohms


Application

HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)


Specifications

Symbol	Parameter	Value		Unit
		STP10NK80Z	STP10NK80ZFP
VDS	Drain-source Voltage (VGS = 0)	60		V
VDGR	Drain- gate Voltage (RGS = 20 k)	60		V
VGS	Gate-Source Voltage	±20		V
ID	Drain Current (continuous) at Tc = 25	36	21	A
ID	Drain Current (continuous) at Tc = 100	25	14	A
IDM(`)	Drain Current (pulsed)	144	144	A
PTOT	Total Dissipation at Tc = 25	120	40	W
	Derating Factor	0.8	0.27	W/
VISO	Insulation Withstand Voltage (DC)		2000	V
Tstg	Storage Temperature	-65 to 175
Tj	Max. Operating Junction Temperature	175

(•)Pulse width limited by safe operating area