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STP36NE06

MOSFET RO 511-STP36NF06

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SeekIC No. : 00162321 Detail

STP36NE06: MOSFET RO 511-STP36NF06

STP36NE06 Data Sheet

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Part Number:
STP36NE06
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.032 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 36 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.032 Ohms


Features:

 TYPICAL RDS(on) = 0.032
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
APPLICATION ORIENTED CHARACTERIZATION


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS


Specifications

Symbol Parameter Value Unit
STP36NE06 STP36NE06FP
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k ) 60 V
VGS Gate- source Voltage ±20 V
ID Drain Current (continuos) at TC = 25
 36
 20 A
ID Drain Current (continuos) at TC = 100 24 14 A
IDM() Drain Current (pulsed) 144 144 A
PTOT Total Dissipation at TC = 25 100 35 W
  Derating Factor 0.66 0.27 W/
dv/dt (1) Peak Diode Recovery voltage slope 7 7 V/ns
VISO Insulation Withstand Voltage (DC) ----- 2000 V
Tstg Storage Temperature 65 to 175
Tj Max. Operating Junction Temperature 75
(•) Pulse width limited by safe operating area   (1) ISD  36 A,di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX


Description

This STP36NE06 Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTP36NE06
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C36A
Rds On (Max) @ Id, Vgs40 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 2800pF @ 25V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names STP36NE06
STP36NE06
497 2763 5 ND
49727635ND
497-2763-5



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