STP36NF03L

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Package / Case : TO-220
Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.015 Ohms
Gate-Source Breakdown Voltage : +/- 18 V


Application

SPECIFICALLYDESIGNED AND OPTIMISEDFOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25	36	A
ID	Drain Current (continuous) at Tc = 100	25	A
IDM(`)	Drain Current (pulsed)	144	A
PTOT	Total Dissipation at Tc = 25	75	W
	Derating Factor	0.5	W/
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	175

(•)Pulse width limited by safe operating area


Description

This STP36NF03L specific Power Mosfet is the third generation of STMicroelectronics unique "Single Feature Size^TM" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, STP36NF03L gives the best performance in terms of both conductionand switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.