STP36NF06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 40 mOhms


Application

 HIGH CURRENT, HIGH SWITCHING SPEED


Specifications

Symbol	Parameter	Value		Unit
		STP10NK80Z	STP10NK80ZFP
VDS	Drain-source Voltage (VGS = 0)	60		V
VDGR	Drain- gate Voltage (RGS = 20 k)	60		V
VGS	Gate-Source Voltage	± 20		V
ID	Drain Current (continuous) at Tc = 25	30	18 (*)	A
ID	Drain Current (continuous) at Tc = 100	21	12	A
IDM(`)	Drain Current (pulsed)	120	72	A
PTOT(1)	Total Dissipation at Tc = 25	70	25	W
	Derating Factor	0.47	0.17	W/
dv/dt (1)	Gate source ESD(HBM-C=100pF, R=1.5KW)	20		V/ns
EAS (2)	Peak Diode Recovery voltage slope	200		mJ
Tstg	Storage Temperature	-55 to 175
Tj	Operating Junction Temperature

(•)Pulse width limited by safe operating area (1)ISD36A, di/dt400A/µs, V_DD(BR)DSS, Tj0TJMAX
(3) Starting Tj = 25 , ID = 18A, V_DD = 45V (*) Current Limited by Package


Description

This Power MOSFET STP36NF06 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.