Position: Home  > All Categories> Integrated Circuits (ICs) > STP3NA60

STP3NA60

MOSFET N-Ch 600 Volt 2.9 A

product image

STP3NA60 Picture
See larger image
SeekIC No. : 00165253 Detail

STP3NA60: MOSFET N-Ch 600 Volt 2.9 A

STP3NA60 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STP3NA60
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 2.9 A
Resistance Drain-Source RDS (on) : 4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 2.9 A
Resistance Drain-Source RDS (on) : 4 Ohms


Features:

TYPE
VDSS
RDS(on)
ID
STP3NA60
600 V
< 4
2.9 A

` TYPICAL RDS(on) = 3.3
` ± 30V GATE TO SOURCE VOLTAGE RATING
` 100% AVALANCHE TESTED
` REPETITIVE AVALANCHE DATA AT 100
` LOW INTRINSIC CAPACITANCES
` GATE GHARGE MINIMIZED
` REDUCED THRESHOLD VOLTAGE SPREAD


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWERSUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-sourceVoltage(VGS =0)
600
V
VDGR
 Drain-gateVoltage(RGS =20k)
600
V
VGS
 Gate-sourceVoltage
±30
V
ID
 DrainCurrent(continuous)atTc =25
2.9
A
ID
 Drain Current(continuous)atTc =100
1.8
A
IDM(`)
 Drain Current(pulsed)
11.6
A
Ptot
 Total DissipationatTC =25
80
W
 Derating Factor
0.64
W/
VISO
 InsulationWithstandVoltage(DC)
-
V
Tstg
 Storage Temperature
-65 to1 50
Tj
 Max.Operating Junction Temperature
150

(•) Pulse width limited by safe operating area



Description

This series of POWER MOSFETS STP3NA60 represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Optoelectronics
SFH7770
TLP423J
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Integrated Circuits (ICs)
TA8435H
1MB12-140
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Prototyping Products
AVT4168
DE1
View more