STP3NB100

MOSFET N-Ch 1000 Volt 3 Amp

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STP3NB100 Picture
SeekIC No. : 00165061 Detail

STP3NB100: MOSFET N-Ch 1000 Volt 3 Amp

floor Price/Ceiling Price

Part Number:
STP3NB100
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 3 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 6 Ohms


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE




Specifications

Symbol
Parameter
Value
Unit
STP3NB100
STP3NB100FP
VDS
Drain-source Voltage (VGS = 0)
1000
V
VDGR
Drain- gate Voltage (RGS = 20 k)
1000
V
VGS
Gate-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc = 25 oC
3
3(**)
A
ID
Drain Current (continuous) at Tc = 100 oC
1.9
1.1
A
IDM(•)
Drain Current (pulsed)
12
12
A
Ptot
Total Dissipation at Tc = 25 oC
100
35
W
Derating Factor
0.8
0.28
W/oC
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
4.5
V/ns
VISO
Insulat ion Withstand Voltage (DC)
-
2000
V
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC



Description

Using the latest high voltage STP3NB100 MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




Parameters:

Technical/Catalog InformationSTP3NB100
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs6 Ohm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds 700pF @ 25V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names STP3NB100
STP3NB100
497 2641 5 ND
49726415ND
497-2641-5



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