STP3NB80

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 4.6 Ohms
Continuous Drain Current : 2.6 A


Features:

TYPE	VDSS	RDS(on)	ID
STP3NB80	800 V	< 6.5	2.6 A

` TYPICAL RDS(on) = 4.6
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· UNINTERRUPTIBLE POWER SUPPLY(UPS)
· DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT


Specifications

Symbol	Parameter	Value	Units
VDSS	Drain-Source Voltage	800	V
VDGR	Drain- gate Voltage (RGS = 20 k)	800	V
VGS	Gate-source Voltage	±30	V
ID	Drain Current (continuous) at Tc = 25	2.6	A
ID	Drain Current (continuous) at Tc = 100	1.6	A
IDM(•)	Drain Current (pulsed)	10.4	A
Ptot	Total Dissipation at Tc = 25	90	W
	Derat ing Factor	0.72	W/
dv/dt (1)	Peak Diode Recovery voltage slope	-	V/ns
VISO	Insulat ion Withstand Voltage (DC)	-	V
Ts tg	Storage Temperature	-65 to +150
Tj	Max. Operating Junction Temperature	150

(•) Pulse width limited by safe operating area

( 1) I_SD 2.6 A, di/dt 200 A/s, V_DD V_(BR)DSS, Tj T_JMA


Description

Using the latest high voltage STP3NB80 MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with  outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.