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STP3NC70ZFP

Features: · TYPICAL RDS(on) = 4.1W· EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES· 100% AVALANCHE TESTED· VERY LOW GATE INPUT RESISTANCE· GATE CHARGE MINIMIZEDApplication· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION· WELDING EQUIPMENTSpecifications S...

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SeekIC No. : 004508424 Detail

STP3NC70ZFP: Features: · TYPICAL RDS(on) = 4.1W· EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES· 100% AVALANCHE TESTED· VERY LOW GATE INPUT RESISTANCE· GATE CHARGE MINIMIZEDApplication· SINGLE...

STP3NC70ZFP Data Sheet

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Part Number:
STP3NC70ZFP
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

· TYPICAL RDS(on) = 4.1W
· EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES
· 100% AVALANCHE TESTED
· VERY LOW GATE INPUT RESISTANCE
· GATE CHARGE MINIMIZED


Application

· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
· WELDING EQUIPMENT


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 700 V
VDGR Drain-gate Voltage (RGS = 20 kW) 700 V
VGS Gate- source Voltage ± 25 V
ID Drain Current (continuos) at TC = 25 2.5(*) A
ID Drain Current (continuos) at TC = 100 1.6(*) A
IDM (`) Drain Current (pulsed) 10 A
PTOT Total Dissipation at TC = 25 35 W
  Derating Factor 0.28 W/
IGS Gate-source Current (DC) ±50 mA
V ESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KW) 1.5 KV
dv/dt (1) Peak Diode Recovery voltage slope 3 KV
VISO Insulation Withstand Voltage (DC) 2500 V
Tstg Storage Temperature 65 to 150
Tj Max. Operating Junction Temperature 150

(•)Pulse width limited by safe operating area
(1) ISD2.5A, di/dt100A/s, VDD V(BR)DSS, Tj TJMAX
(*) Limited by Maximum Temperature allowed


Description

The third generation of STP3NC70ZFP MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.




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