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STP3NC90ZFP

Features: `TYPICAL RDS(on) = 3.2`EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES`100% AVALANCHE TESTED` VERY LOW GATE INPUT RESISTANCE`GATE CHARGE MINIMIZEDApplication·SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION· WELDING EQUIPMENTSpecifications Symbo...

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STP3NC90ZFP: Features: `TYPICAL RDS(on) = 3.2`EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES`100% AVALANCHE TESTED` VERY LOW GATE INPUT RESISTANCE`GATE CHARGE MINIMIZEDApplication·SINGLE-ENDED...

STP3NC90ZFP Data Sheet

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Part Number:
STP3NC90ZFP
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`TYPICAL RDS(on) = 3.2
`EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES
`100% AVALANCHE TESTED
` VERY LOW GATE INPUT RESISTANCE
`GATE CHARGE MINIMIZED


Application

·SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
· WELDING EQUIPMENT


Specifications

Symbol
 Parameter
Value
Unit
  
STP(B)3NC90Z(-1)
STP3NC90ZFP
VDS
 Drain-source Voltage (VGS = 0)
900
V
VDGR
 Drain-gate Voltage (RGS = 20 kW)
900
V
VGS
 Gate- source Voltage
± 25
V
ID
 Drain Current (continuos) at TC = 25°C
3.5
3.5(*)
A
ID
 Drain Current (continuos) at TC = 100°C
2.2
2.2(*)
A
IDM (`)
 Drain Current (pulsed)
14
14
A
PTOT
 Total Dissipation at TC = 25°C
100
35
W
 Derating Factor
0.8
0.28
W/°C
IGS
 Gate-source Current (*)
±50
mA
VESD(G-S)
 Gate source ESD(HBM-C=100pF, R=15KW)
2.5
KV
dv/dt
 Peak Diode Recovery voltage slope
3
V/ns
VISO
 Insulation Withstand Voltage (DC)
-
2000
V
Tstg
 Storage Temperature
65 to 150
°C
Tj
 Max. Operating Junction Temperature
150
°C
(•)Pulse width limited by safe operating area
(1)ISD 3.5A, di/dt 100A/s, VDD  V(BR)DSS, Tj  TJMAX
(*).Limited only by maximum temperature allowed


Description

The third generation of STP3NC90ZFP MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.




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