STP3NK60Z-STP3NK60ZFP

Application

HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
LIGHTING


Specifications

Symbol	Parameter	Value			Unit
		STP3NK60Z STB3NK60Z	STP3NK60ZFP	STD3NK60Z STD3NK60Z-1
VDS	Drain-source Voltage (VGS =0)	600			V
VDGR	Drain-gate Voltage (RGS =20kΩ)	600			V
VGS	Gate- source Voltage	± 30			V
ID	Drain Current (continuous) at TC = 25°C	2.4	2.4 (*)	2.4 (*)	A
ID	Drain Current (continuous) at TC =100°C	1.51	1.51 (*)	1.51 (*)	A
IDM (· )	Drain Current (pulsed)	9.6	9.6 (*)	9.6 (*)	A
PTOT	Total Dissipation at TC = 25°C	45	20	45	W
	Derating Factor	0.36	0.16	0.36	W/°C
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KΩ)	2100			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Voltage (DC)		2500		V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55to150			°C

 


Description

The STP3NK60Z-STP3NK60ZFP SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak-en to ensure a very good dv/dt capability for the most demanding applications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutionary MDmesh™ products.