STP3NK90Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 4.8 Ohms


Features:

 TYPICAL RDS(on) = 4.1 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURINGREPEATIBILITY


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC
LIGHTING


Specifications

Symbol	Parameter	Value			Unit
		STP3NK90Z	STP3NK90ZFP	STD3NK90Z STD3NK90Z-1
VDS	Drain-source Voltage (VGS =0)	900			V
VDGR	DraingateVoltage (RGS=20kΩ)	900			V
VGS	Gate- source Voltage	± 30			V
ID	Drain Current (continuous) at TC = 25°C	3	3 (*)	3	A
ID	Drain Current (continuous) at TC = 100°C	1.89	3 (*)	1.89	A
IDM (·)	Drain Current (pulsed)	12	12 (*)	12	A
PTOT	Total Dissipation at TC = 25°C	90	25	90	W
	Derating Factor	0.72	0.2	0.72	W/°C
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KΩ)	4000			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Voltage (DC)	.	2500	.	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55to150			°C

Description

The STP3NK90Z SuperMESH™ series is obtained through anextreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushingon-resistance significantly down, special care is tak-en to ensure a very good dv/dt capability for themost demanding applications. Such series comple-ments ST full range of high voltageMOSFETs in-cluding revolutionary MDmesh™ products.


Parameters:

Technical/Catalog Information	STP3NK90Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	4.8 Ohm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds	590pF @ 25V
Power - Max	90W
Packaging	Tube
Gate Charge (Qg) @ Vgs	22.7nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP3NK90Z STP3NK90Z