MOSFET N-CH 900V 3A TO-220FP
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Series: | SuperMESH™ | Manufacturer: | STMicroelectronics | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 900V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 3A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 4.8 Ohm @ 1.5A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4.5V @ 50µA | Gate Charge (Qg) @ Vgs: | 22.7nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 590pF @ 25V | ||
Power - Max: | 25W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 Full Pack | Supplier Device Package: | TO-220FP |
Symbol |
Parameter |
Value |
Unit | ||
STP3NK90Z |
STP3NK90ZFP |
STD3NK90Z STD3NK90Z-1 |
|||
VDS |
Drain-source Voltage (VGS =0) |
900 |
V | ||
VDGR |
DraingateVoltage (RGS=20kΩ) |
900 |
V | ||
VGS |
Gate- source Voltage |
± 30 |
V | ||
ID |
Drain Current (continuous) at TC = 25°C |
3 |
3 (*) |
3 |
A |
ID |
Drain Current (continuous) at TC = 100°C |
1.89 |
3 (*) |
1.89 |
A |
IDM (·) |
Drain Current (pulsed) |
12 |
12 (*) |
12 |
A |
PTOT |
Total Dissipation at TC = 25°C |
90 |
25 |
90 |
W |
Derating Factor |
0.72 |
0.2 |
0.72 |
W/°C | |
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KΩ) |
4000 |
V | ||
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
VISO |
Insulation Withstand Voltage (DC) |
. |
2500 |
. |
V |
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55to150 |
°C |