MFG:TO220ABNONISOL Package Cooled:7850 D/C:ST
MFG: TO220ABNONISOL
Package Cooled: 7850
D/C: ST
Description: This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically bee...
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
|
Symbol |
Parameter |
Value |
Unit | |
|
VDS |
Drain-source Voltage (VGS = 0) |
100 |
V | |
|
VDGR |
Drain-gate Voltage (RGS = 20 k ) |
100 |
V | |
|
VGS |
Gate- source Voltage |
±20 |
V | |
|
ID(*) |
Drain Current (continuos) at TC = 25°C |
50 |
A | |
|
ID |
Drain Current (continuos) at TC = 100°C |
35 |
A | |
|
I DM () |
Drain Current (pulsed) |
200 |
A | |
|
PTOT |
Total Dissipation at TC = 25°C |
150 |
W | |
|
Derating Factor |
1 |
W/°C | ||
|
dv/d |
Peak Diode Recovery voltage slope |
20 |
V/ns | |
|
EAS (2) |
Single Pulse Avalanche Energy |
150 |
mJ | |
|
Tstg |
Storage Temperature |
55 to 175 |
||
|
Tj |
Max. Operating Junction Temperature |
°C | ||
STP40NF10
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