STP40NF10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 28 mOhms


Features:

`TYPICAL R <sub>DS(on)</sub> = 0.024W
`EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` APPLICATION ORIENTED CHARACTERIZATION
` ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL


Application

· HIGH-EFFICIENCY DC-DC CONVERTERS
· UPS AND MOTOR CONTROL


Specifications

Symbol	Parameter	Value		Unit
VDS	Drain-source Voltage (VGS = 0)	100		V
VDGR	Drain-gate Voltage (RGS = 20 k )	100		V
VGS	Gate- source Voltage	±20		V
ID(*)	Drain Current (continuos) at TC = 25°C	50		A
ID	Drain Current (continuos) at TC = 100°C	35		A
I DM ()	Drain Current (pulsed)	200		A
PTOT	Total Dissipation at TC = 25°C	150		W
	Derating Factor	1		W/°C
dv/d	Peak Diode Recovery voltage slope	20		V/ns
EAS (2)	Single Pulse Avalanche Energy	150		mJ
Tstg	Storage Temperature	55 to 175
Tj	Max. Operating Junction Temperature			°C

(•)Pulse width limited by safe operating area
(1)I_SD 40 A, di/dt 600A/s, V_DD V _(BR)DSS, T_j TJMAX
(2) Starting T_j = 25°C, I_D = 40A, V_DD = 50V
(*) Limited by Package


Description

This Power MOSFET series STP40NF10 realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.