MFG:ST Package Cooled:03+ D/C:50/TUBE
MFG: ST
Package Cooled: 03+
D/C: 50/TUBE
Description: This powermos MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAY͐...
This powermos MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
|
Symbol |
Parameter |
Value |
Unit | |
|
VDS |
Drain-source Voltage (VGS = 0) |
150 |
V | |
|
VDGR |
Drain-gate Voltage (RGS = 20 k ) |
150 |
V | |
|
VGS |
Gate- source Voltage |
±20 |
V | |
|
ID |
Drain Current (continuos) at TC = 25°C |
10 |
A | |
|
ID |
Drain Current (continuos) at TC = 100°C |
25 |
A | |
|
I DM () |
Drain Current (pulsed) |
160 |
A | |
|
PTOT |
Total Dissipation at TC = 25°C |
140 |
W | |
|
Derating Factor |
0.933 |
W/°C | ||
|
dv/d |
Peak Diode Recovery voltage slope |
9 |
V/ns | |
|
Tstg |
Storage Temperature |
65 to 175 |
°C | |
|
Tj |
Max. Operating Junction Temperature |
175 |
°C | |
STP40NS15
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