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STP40NS15

MOSFET N-Ch 150 Volt 40 Amp

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SeekIC No. : 00160670 Detail

STP40NS15: MOSFET N-Ch 150 Volt 40 Amp

STP40NS15 Data Sheet

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Part Number:
STP40NS15
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.052 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 40 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.052 Ohms


Features:

`TYPICAL R DS(on) = 0.042
` EXTREMELY HIGH dv/dt CAPABILITY
`VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT SWITCHING
·UNINTERRUPTIBLE POWER SUPPLY (UPS)
· PRIMARYSWITCH IN ISOLATED DC-DC CONVERTERS


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
150
V
VDGR
Drain-gate Voltage (RGS = 20 k )
150
V
VGS
Gate- source Voltage
±20
V
ID
Drain Current (continuos) at TC = 25°C
10
A
ID
Drain Current (continuos) at TC = 100°C
25
A
I DM ()
Drain Current (pulsed)
160
A
PTOT
Total Dissipation at TC = 25°C
140
W
Derating Factor
0.933
W/°C
dv/d
Peak Diode Recovery voltage slope
9
V/ns
Tstg
Storage Temperature
65 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
(•)Pulse width limited by safe operating area



Description

This powermos MOSFET STP40NS15 is designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.




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