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STP45N10

MOSFET REORD 511-STP50NE10 TO-220 N-CH 100V 45A

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SeekIC No. : 00166505 Detail

STP45N10: MOSFET REORD 511-STP50NE10 TO-220 N-CH 100V 45A

STP45N10 Data Sheet

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Part Number:
STP45N10
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 0.035 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 0.035 Ohms


Features:

`TYPICAL R DS(on) = 0.027 
`AVALANCHE RUGGED TECHNOLOGY
`100% AVALANCHE TESTED
`REPETITIVE AVALANCHE DATA AT 100oC
`LOW GATE CHARGE
`HIGH CURRENT CAPABILITY
`175 oC OPERATING TEMPERATURE
`APPLICATIOn ORIENTED CHARACTERIZATION


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SOLENOID AND RELAY DRIVERS
· DC-DC & DC-AC CONVERTERS
·AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS. Etc.)


Specifications

Symbol
Parameter
Value
Unit
STP45N10
STP45N10FI
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain-gate Voltage (RGS = 20 k )
100
V
VGS
Gate- source Voltage
±25
V
ID
Drain Current (continuos) at TC = 25°C
45
24
A
ID
Drain Current (continuos) at TC = 100°C
32
17
A
I DM ()
Drain Current (pulsed)
180
180
A
PTOT
Total Dissipation at TC = 25°C
150
45
W
Derating Factor
1
0.3
W/°C
VISO
Insulation Withstand Voltage (DC)
2000
V
Tstg
Storage Temperature
65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C



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