MFG:ST Package Cooled:03+ D/C:220
MFG: ST
Package Cooled: 03+
D/C: 220
Description: This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM
This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable
manufacturing reproducibility.
| Symbol | Parameter | Value | Unit | |
| STP45NE06L | STP45NE06LFP | |||
| VDS | Drain-source Voltage (VGS = 0) | 60 | V | |
| VDGR | Drain- gate Voltage (RGS = 20 kW) | 60 | V | |
| VGS | Gate-source Voltage | ± 20 | V | |
| ID | Drain Current (continuous) at Tc = 25 | 60 | 35 | A |
| ID | Drain Current (continuous) at Tc = 100 | 42 | 24 | A |
| IDM(•) | Drain Current (pulsed) | 240 | 140 | A |
| Ptot | Total Dissipation at Tc = 25 | 150 | 45 | W |
| Derating Factor | 1 | 0.3 | W/ | |
| VISO | Insulation Withstand Voltage (DC) | - | 2000 | V |
| dv/dt | Peak Diode Recovery voltage slope | 7 | V/ns | |
| Tstg | Storage Temperature | -65 to 175 | ||
| Tj | Max. Operating Junction Temperature | 175 | ||
STP45NE06L
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This Power Mosfet STP45NE06FPis the latest development of SGS-THOMSON unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical al...
This Power Mosfet STP45NE06is the latest development of SGS-THOMSON unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alig...
This powermos MOSFET STP40NS15is designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
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