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STP45NE06LFP

Features: *TYPICAL RDS(on) = 0.022 * EXCEPTIONAL dv/dt CAPABILITY* 100% AVALANCHE TESTED* LOW GATE CHARGE 100 * LOW THRESHOLD DRIVEApplication*HIGH CURRENT, HIGH SPEED SWITCHING* SOLENOID AND RELAY DRIVERS* MOTOR CONTROL, AUDIO AMPLIFIERS* DC-DC & DC-AC CONVERTERSSpecifications Symbol Pa...

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SeekIC No. : 004508435 Detail

STP45NE06LFP: Features: *TYPICAL RDS(on) = 0.022 * EXCEPTIONAL dv/dt CAPABILITY* 100% AVALANCHE TESTED* LOW GATE CHARGE 100 * LOW THRESHOLD DRIVEApplication*HIGH CURRENT, HIGH SPEED SWITCHING* SOLENOID AND RELAY ...

STP45NE06LFP Data Sheet

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Part Number:
STP45NE06LFP
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* TYPICAL RDS(on) = 0.022
* EXCEPTIONAL dv/dt CAPABILITY
* 100% AVALANCHE TESTED
* LOW GATE CHARGE 100
* LOW THRESHOLD DRIVE


Application

* HIGH CURRENT, HIGH SPEED SWITCHING
* SOLENOID AND RELAY DRIVERS
* MOTOR CONTROL, AUDIO AMPLIFIERS
* DC-DC & DC-AC CONVERTERS


Specifications

Symbol Parameter Value Unit
STP45NE06L STP45NE06LFP
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain- gate Voltage (RGS = 20 kW) 60 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at Tc = 25 60 35 A
ID Drain Current (continuous) at Tc = 100 42 24 A
IDM(•) Drain Current (pulsed) 240 140 A
Ptot Total Dissipation at Tc = 25 150 45 W
  Derating Factor 1 0.3 W/
VISO Insulation Withstand Voltage (DC) - 2000 V
dv/dt Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature -65 to 175
Tj Max. Operating Junction Temperature 175



Description

This Power Mosfet STP45NE06LFP is the latest development of STMicroelectronics unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable
manufacturing reproducibility.




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