MFG:N/A Package Cooled:NA/ D/C:09+
MFG: N/A
Package Cooled: NA/
D/C: 09+
Description: This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM
This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable
manufacturing reproducibility.
| Symbol | Parameter | Value | Unit | |
| STP45NE06L | STP45NE06LFP | |||
| VDS | Drain-source Voltage (VGS = 0) | 60 | V | |
| VDGR | Drain- gate Voltage (RGS = 20 kW) | 60 | V | |
| VGS | Gate-source Voltage | ± 20 | V | |
| ID | Drain Current (continuous) at Tc = 25 | 60 | 35 | A |
| ID | Drain Current (continuous) at Tc = 100 | 42 | 24 | A |
| IDM(•) | Drain Current (pulsed) | 240 | 140 | A |
| Ptot | Total Dissipation at Tc = 25 | 150 | 45 | W |
| Derating Factor | 1 | 0.3 | W/ | |
| VISO | Insulation Withstand Voltage (DC) | - | 2000 | V |
| dv/dt | Peak Diode Recovery voltage slope | 7 | V/ns | |
| Tstg | Storage Temperature | -65 to 175 | ||
| Tj | Max. Operating Junction Temperature | 175 | ||
STP45NE06LFP
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This Power Mosfet STP45NE06Lis the latest development of STMicroelectronics unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less cri...
This Power Mosfet STP45NE06FPis the latest development of SGS-THOMSON unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical al...
This Power Mosfet STP45NE06is the latest development of SGS-THOMSON unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alig...
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