STP4N150

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 5 Ohms
Drain-Source Breakdown Voltage : 1500 V


Application

·SWITCH MODE POWER SUPPLIES


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	1500	V
VDGR	Drain- gate Voltage (RGS = 20 k)	1500	V
VGS	Gate-source Voltage	±30	V
ID	Drain Current (continuous) at Tc = 25	4	A
ID	Drain Current (continuous) at Tc = 100	2.5	A
IDM(+)	Drain Current (pulsed)	12	A
PTOT	Total Dissipation at Tc = 25	160	W
	Derating Factor	1	W/
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150

(+) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed


Description

Using the well consolidated high voltage STP4N150 MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

Parameters:

Technical/Catalog Information	STP4N150
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1500V (1.5kV)
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	7 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	1300pF @ 25V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP4N150 STP4N150 497 5091 5 ND 49750915ND 497-5091-5