Purchase STP4N150, In-stock STP4N150 From SeekIC.
Part Number: STP4N150
Description: Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed ...
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STP4N150
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General Description
STP4N150 General Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
STP4N150 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
1500 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
1500 | V |
| VGS |
Gate-source Voltage |
±30 | V |
| ID |
Drain Current (continuous) at Tc = 25 |
4 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
2.5 | A |
| IDM(+) |
Drain Current (pulsed) |
12 | A |
| PTOT |
Total Dissipation at Tc = 25 |
160 | W |
|
Derating Factor |
1 | W/ | |
| Tj Tstg |
Operating Junction Temperature |
-55 to 150 |
(*) Limited only by maximum temperature allowed
STP4N150 Typical Application
·SWITCH MODE POWER SUPPLIES
STP4N150
PDF/DataSheet Download
- Datasheet: STP4N150
- File Size: 307569 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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