MOSFET N-Ch 525V 2.5A 2.1 Ohm SuperMESH3
STP4N52K3: MOSFET N-Ch 525V 2.5A 2.1 Ohm SuperMESH3
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Features: `TYPICAL RDS(on)=0.016 `AVALANCHERUGGEDTECHNOLOGY`100%AVALANCHETESTED`HIGHCURRENTCAPABIL...
Features: · TYPICAL R DS(on) = 0.014 W· EXCEPTIONAL dv/dt CAPABILITY· LOW GATE CHARGE A 100 oC·APP...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 525 V | ||
| Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 2.5 A | ||
| Resistance Drain-Source RDS (on) : | 2.1 Ohms | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220FP | Packaging : | Tube |