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STP4NA100

Features: TYPE VDSS RDS(on) ID STP4NA100 1000 V <3. 5 W 4.2 A` TYPICAL RDS(on) = 2.9 W` ± 30V GATE TO SOURCE VOLTAGE RATING` 100% AVALANCHE TESTED` REPETITIVE AVALANCHE DATA AT 100` LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZED` REDUCED THRESHOLD VOLTAGE SPREA...

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SeekIC No. : 004508437 Detail

STP4NA100: Features: TYPE VDSS RDS(on) ID STP4NA100 1000 V <3. 5 W 4.2 A` TYPICAL RDS(on) = 2.9 W` ± 30V GATE TO SOURCE VOLTAGE RATING` 100% AVALANCHE TESTED` REPETITIVE AVALA...

STP4NA100 Data Sheet

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Part Number:
STP4NA100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

TYPE
VDSS
RDS(on)
ID
STP4NA100
1000 V
<3. 5 W
4.2 A
` TYPICAL RDS(on) = 2.9 W
` ± 30V GATE TO SOURCE VOLTAGE RATING
` 100% AVALANCHE TESTED
` REPETITIVE AVALANCHE DATA AT 100
` LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED
` REDUCED THRESHOLD VOLTAGE SPREAD


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol
Parameter
Value
Units
VDS
 Drain-source Voltage (VGS = 0)
1000
V
VDGR
 Drain- gate Voltage (RGS = 20 k)
1000
V
VGS
 Gate-source Voltage
±30
V
ID
 Drain Current (continuous) at Tc = 25

4.2
A
ID
 Drain Current (continuous) at Tc = 100
2.6
A
IDM(`)
 Drain Current (pulsedTotal)
16.8
A
Ptot
 Dissipation at Tc = 25
125
W
 Derating Factor
1
W/
Tstg
 Storage Temperature
-65to 150
Tj
 Max. Operating Junction Temperature
150

(`) Pulse width limited by safe operating area


Description

This STP4NA100 series of POWER MOSFETS represents the most advanced high voltage technology.

The optmized cell layout coupled with a new  proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.




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