Features: TYPE VDSS RDS(on) ID STP4NA40 400V <2 4A `TYPICAL RDS(on) =1.7`±30V GATETO SOURCE VOLTAGE RATING `100% AVALANCHE TESTED`REPETITIVE AVALANCHE DATA AT 100`LOW INTRINSIC CAPACITANCES`GATE GHARGEMINIMIZED `REDUCEDT HRESHOLD VOL TAGE SPREADApplication·HIGH CUR...
STP4NA40: Features: TYPE VDSS RDS(on) ID STP4NA40 400V <2 4A `TYPICAL RDS(on) =1.7`±30V GATETO SOURCE VOLTAGE RATING `100% AVALANCHE TESTED`REPETITIVE AVALANCHE DATA AT 100`LO...
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Features: `TYPICAL RDS(on)=0.016 `AVALANCHERUGGEDTECHNOLOGY`100%AVALANCHETESTED`HIGHCURRENTCAPABIL...
Features: · TYPICAL R DS(on) = 0.014 W· EXCEPTIONAL dv/dt CAPABILITY· LOW GATE CHARGE A 100 oC·APP...
|
TYPE |
VDSS |
RDS(on) |
ID |
| STP4NA40 |
400V |
<2 |
4A |
`TYPICAL RDS(on) =1.7
`±30V GATETO SOURCE VOLTAGE RATING
`100% AVALANCHE TESTED
`REPETITIVE AVALANCHE DATA AT 100
`LOW INTRINSIC CAPACITANCES
`GATE GHARGEMINIMIZED
`REDUCEDT HRESHOLD VOL TAGE SPREAD
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-sourceVoltage(VGS =0) |
400 |
V |
|
VDGR |
Drain-gateVoltage(RGS =20k) |
400 |
V |
|
VGS |
Gate-sourceVoltage |
±30 |
V |
|
ID |
DrainCurrent(continuous)atTc =25 |
4 |
A |
|
ID |
Drain Current(continuous)atTc =100 |
2.5 |
A |
|
IDM(`) |
Drain Current(pulsed) |
16 |
A |
|
Ptot |
Total DissipationatT =25 |
80 |
W |
| Derating Factor |
0.64 |
W/ | |
|
VISO |
InsulationWithstandVoltage(DC) |
- |
V |
|
Tstg |
Storage Temperature |
-65to150 |
|
|
Tj |
Max.Operating Junction Temperature |
150 |
This series of STP4NA40 POWER MOSFETS represents the most advanced high vol tagetechnology.The optimized celll ayout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge,unequalled ruggedness and superiors witching performance.