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STP4NA60FP

Features: TYPE VDSS RDS(on) ID STP4NA60FP 600 V < 2.2 2.7A` TYPICAL RDS(on) = 1.85 ` ± 30V GATE TO SOURCE VOLTAGE RATING` 100% AVALANCHE TESTED` REPETITIVE AVALANCHE DATA AT 100` LOWINTRINSIC CAPACITANCES` GATECHARGE MINIMIZED` REDUCED THRESHOLD VOLTAGE SPREADAppli...

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SeekIC No. : 004508442 Detail

STP4NA60FP: Features: TYPE VDSS RDS(on) ID STP4NA60FP 600 V < 2.2 2.7A` TYPICAL RDS(on) = 1.85 ` ± 30V GATE TO SOURCE VOLTAGE RATING` 100% AVALANCHE TESTED` REPETITIVE AVALANCHE...

STP4NA60FP Data Sheet

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Part Number:
STP4NA60FP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

TYPE
VDSS
RDS(on)
ID
STP4NA60FP
600 V
< 2.2
2.7A

` TYPICAL RDS(on) = 1.85
` ± 30V GATE TO SOURCE VOLTAGE RATING
` 100% AVALANCHE TESTED
` REPETITIVE AVALANCHE DATA AT 100
` LOWINTRINSIC CAPACITANCES
` GATECHARGE MINIMIZED
` REDUCED THRESHOLD VOLTAGE SPREAD


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-sourceVoltage(VGS =0)
600
V
VDGR
 Drain-gateVoltage(RGS =20k)
600
V
VGS
 Gate-sourceVoltage
±30
V
ID
 DrainCurrent(continuous)atTc =25
2.7
A
ID
 Drain Current(continuous)atTc =100
1.8
A
IDM(`)
 Drain Current(pulsed)
17.2
A
Ptot
 Total DissipationatTC =25
35
W
 Derating Factor
0.28
W/
VISO
 InsulationWithstandVoltage(DC)
2000
V
Tstg
 Storage Temperature
-65 to1 50
Tj
 Max.Operating Junction Temperature
150

(•) Pulse width limited by safe operating area


Description

This series of STP4NA60FP POWER MOSFETS represents the most advanced high voltage technology. The  ptmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switchin performance.




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