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STP4NA80

MOSFET RO 511-STP4NB80 TO-220 N-CH 800V 4A

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SeekIC No. : 00165896 Detail

STP4NA80: MOSFET RO 511-STP4NB80 TO-220 N-CH 800V 4A

STP4NA80 Data Sheet

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Part Number:
STP4NA80
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 2.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 4 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 2.4 Ohms


Features:

TYPE
VDSS
RDS(on)
ID
STP4NA80
800 V
< 3
4 A

` TYPICAL RDS(on) = 2.4 n ± 30V GATE TO SOURCE VOLTAGE RATING
` 100% AVALANCHE TESTED
` REPETITIVE AVALANCHE DATA AT 100
` LOW INTRINSIC CAPACITANCES
` GATE GHARGE MINIMIZED
` REDUCED THRESHOLD VOLTAGE SPREAD


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWERSUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-sourceVoltage(VGS =0)
800
V
VDGR
 Drain-gateVoltage(RGS =20k)
800
V
VGS
 Gate-sourceVoltage
±30
V
ID
 DrainCurrent(continuous)atTc =25
4
A
ID
 Drain Current(continuous)atTc =100
2.5
A
IDM(`)
 Drain Current(pulsed)
16
A
Ptot
 Total DissipationatTC =25
110
W
 Derating Factor
0.88
W/
VISO
 InsulationWithstandVoltage(DC)
-
V
Tstg
 Storage Temperature
-65 to1 50
Tj
 Max.Operating Junction Temperature
150

(•) Pulse width limited by safe operating area


Description

This series of POWER MOSFETS STP4NA80 represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.




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