STP4NB100

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 3.8 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 4.4 Ohms


Features:

` TYPICAL R <sub>DS(on)</sub> = 4
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
`VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value		Unit
		STP4NB100	STP4NB100FP
VDS	Drain-source Voltage (VGS = 0)	1000		V
VDGR	Drain-gate Voltage (RGS = 20 k )	1000		V
VGS	Gate- source Voltage	±20		V
ID	Drain Current (continuos) at TC = 25°C	3.8	3.8(*)	A
ID	Drain Current (continuos) at TC = 100°C	2.4	2.4(*)	A
I DM ()	Drain Current (pulsed)	15.2	15.2	A
PTOT	Total Dissipation at TC = 25°C	125	40	W
	Derating Factor	1	0.32	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	4	4	V/ns
VISO	Insulation Withstand Voltage (DC)		2000
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150		°C

(?)Pulse width limited by safe operating area
(1)I_SD 3.8A, di/dt 200A/s, V_DD V _(BR)DSS, T_j TJMAX
(*) Limited only by Maximum Temperature Allowe


Description

Using the latest high voltage STP4NB100 MESH OVERLAY™process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics

Parameters:

Technical/Catalog Information	STP4NB100
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	3.8A
Rds On (Max) @ Id, Vgs	4.4 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	1400pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	45nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STP4NB100 STP4NB100 497 2647 5 ND 49726475ND 497-2647-5