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STP4NB100FP

Features: ` TYPICAL R DS(on) = 4 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED`VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITCH MODE POWER SUPPLIES (SMPS)· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWERSUPPLI...

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STP4NB100FP: Features: ` TYPICAL R DS(on) = 4 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED`VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITC...

STP4NB100FP Data Sheet

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Part Number:
STP4NB100FP
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` TYPICAL R DS(on) = 4
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
`VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol
Parameter
Value
Unit
STP4NB100
STP4NB100FP
VDS
Drain-source Voltage (VGS = 0)
1000
V
VDGR
Drain-gate Voltage (RGS = 20 k )
1000
V
VGS
Gate- source Voltage
±20
V
ID
Drain Current (continuos) at TC = 25°C
3.8
3.8(*)
A
ID
Drain Current (continuos) at TC = 100°C
2.4
2.4(*)
A
I DM ()
Drain Current (pulsed)
15.2
15.2
A
PTOT
Total Dissipation at TC = 25°C
125
40
W
Derating Factor
1
0.32
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
4
4
V/ns
VISO
Insulation Withstand Voltage (DC)
2000
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
°C
(?)Pulse width limited by safe operating area
(1)ISD 3.8A, di/dt 200A/s, VDD V (BR)DSS, Tj TJMAX
(*) Limited only by Maximum Temperature Allowe


Description

Using the latest high voltage STP4NB100FP MESH OVERLAY™process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics




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