STP4NB50

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 3.8 A
Resistance Drain-Source RDS (on) : 2.5 Ohms


Features:

TYPE	VDSS	RDS(on)	ID
STP4NB50	500 V	< 2.8	3.8 A

` TYPICAL R<sub>DS(on)</sub> = 2.5
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value	Units
VDS	Drain-source Voltage (VGS = 0)	500	V
VDGR	Drain- gate Voltage (RGS = 20 k)	500	V
VGS	Gate-source Voltage	±30	V
ID	Drain Current (continuous) at Tc = 25	3.8	A
ID	Drain Current (continuous) at Tc = 100	2.4	A
IDM(•)	Drain Current (pulsed)	15.2	A
Ptot	Total Dissipation at Tc = 25	80	W
	Derating Factor	0.64	W/
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
VISO	Insulat ion Withstand Voltage (DC)	-	V
Tstg	Storage Temperature	-65 to +150
Tj	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area

(1)I_SD 4 A, di/dt200A/s, V_DD V_(BR)DSS, Tj T_JMAX


Description

Using the latest high voltage STP4NB50 MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Parameters:

Technical/Catalog Information	STP4NB50
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	3.8A
Rds On (Max) @ Id, Vgs	2.8 Ohm @ 1.9A, 10V
Input Capacitance (Ciss) @ Vds	400pF @ 25V
Power - Max	80W
Packaging	Tube
Gate Charge (Qg) @ Vgs	21nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STP4NB50 STP4NB50 497 2719 5 ND 49727195ND 497-2719-5