STP4NB80

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 4 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 3.3 Ohms


Features:

TYPE	VDSS	RDS(on)	ID
STP4NB80	800 V	3.3	4 A

` TYPICAL R<sub>DS(on)</sub> = 3
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value	Units
VDSS	Drain-Source Voltage	800	V
VDGR	Drain- gate Voltage (RGS = 20 k)	800	V
VGS	Gate-source Voltage	±30	V
ID	Drain Current (continuous) at Tc = 25	4	A
ID	Drain Current (continuous) at Tc = 100	2.4	A
IDM(•)	Drain Current (pulsed)	16	A
Ptot	Total Dissipation at Tc = 25	100	W
	Derat ing Factor	0.8	W/
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
VISO	Insulat ion Withstand Voltage (DC)	-	V
Ts tg	Storage Temperature	-65 to +150
Tj	Max. Operating Junction Temperature	150

(`) Pulse width limited by safe operating area

(1) ISD 4 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX


Description

Using the latest high voltage STP4NB80 MESH OVERLAYÔ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche an dv/dt capabilities and unrivalled gate charge and switching characteristics.