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STP4NC50

Features: TYPE VDSS RDS(on) ID STP4NC50 500V <2.7 4A`TYPICAL RDS (on)=2.2` EXTREMELY HIGH dv/dt CAPABILITY `100% AVALANCHE TESTED `NEW HIGH VOL TAGE BENCHMARK `GATE CHARGE MINIMIZEDApplication·HIGHCURRENT,HIGHSPEED SWITCHIN ·SWITHMODE POWER SUPPLIES (SMPS)·DC-AC CO...

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SeekIC No. : 004508450 Detail

STP4NC50: Features: TYPE VDSS RDS(on) ID STP4NC50 500V <2.7 4A`TYPICAL RDS (on)=2.2` EXTREMELY HIGH dv/dt CAPABILITY `100% AVALANCHE TESTED `NEW HIGH VOL TAGE BENCHMARK `GATE ...

STP4NC50 Data Sheet

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Part Number:
STP4NC50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

TYPE
VDSS
RDS(on)
ID
STP4NC50
500V
<2.7
4A

`TYPICAL RDS (on)=2.2  
` EXTREMELY HIGH dv/dt CAPABILITY
`100% AVALANCHE TESTED
`NEW HIGH VOL TAGE BENCHMARK
`GATE CHARGE MINIMIZED


Application

· HIGHCURRENT,HIGHSPEED SWITCHIN
·SWITHMODE POWER SUPPLIES (SMPS)
 ·DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES ANDMOTOR DRIVES


Specifications

Symbol
Parameter
Value
Units
VDS
 Drain-source Voltage (VGS = 0)
500
V
VDGR
 Drain-gate Voltage (RGS = 20 k )
500
V
VGS
 Gate- source Voltage
±30
V
ID
 Drain Current (continuos) at TC = 25
4
A
ID
 Drain Current (continuos) at TC = 100
2.5
A
IDM (`)
 Drain Current (pulsed)
12
A
PTOT
 Total Dissipation at TC = 25
80
W
 Derating Factor
0.64
/W/
dv/dt (1)
 Peak Diode Recovery voltage slope
3.5
V/ns
VISO
 Insulation Withstand Voltage (DC)
-
V
Tstg
 Storage Temperature
-65 to 15
Tj
 Max. Operating Junction Temperature
150

(`)Pulsewidthlimitedbysafeoperatingarea

(1)ISD 4A,di/dt100A/s,VDD V (BR)DSS ,T j  TJMAX.
 


Description

The PowerMESHTM II STP4NC50 is the evolution of the first  generation of MESHOVERLAYTM The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-  ing edge for what concerns swithing speed,gate charge and ruggedness.




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