STP4NK80Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 3 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 3500 mOhms


Features:

`  TYPICAL R<sub>DS(on)</sub> = 3
`  EXTREMELY HIGH dv/dt CAPABILITY
`  100% AVALANCHE TESTED
`  GATE CHARGE MINIMIZED
`  VERY LOW INTRINSIC CAPACITANCES
`  VERY GOOD MANUFACTURING REPEATIBILITY


Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
·  LIGHTING


Specifications

Symbol	Parameter	Value			Unit
		STP4NK80Z	STP4NK80ZFP	STD4NK80Z STD4NK80Z-1
VDS	Collector-Source Voltage (VGS = 0 V)	800			V
VDGR	Drain-gate Voltage (RGS = 20 k)	800			V
VGS	Gate-Source Voltage	±30			V
ID	Drain Current (continuous) at TC = 25	3	3(*)	3	A
ID	Drain Current (continuous) at TC = 100	1.89	1.89(*)	1.89	A
IDM(`)	Drain Current (pulsed)	12	12(*)	12	A
Ptot	Total Dissipation at TC = 25	80	25	80	W
	Derating Factor	0.62	0.21	0.64	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	3000			KV
dv/dt(1)	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	-	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150

(`) Pulse width limited by safe operating area
(1) I_SD 4A, di/dt 200A/s, V_DD V_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed


Description

The SuperMESH™ series STP4NK80Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.