STP4NM60

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 4 A


Features:

`TYPICAL R<sub>DS (on</sub>) = 1.3
`HIGH dv/dt AND AVALANCHE CAPABILITIES
`IMPROVED ESD CAPABILITY
`LOW INPUT CAPACITANCE AND GATE  CHARGE
`LOW GATE INPUT RESISTANCE
`TIGHT PROCESS CONTROL AND HIGH
`MANUFACTORING YIELDS


Application

The MDmesh^TM family is very suitable for increase the power density of high voltage converters allow- ing system miniaturization and higher efficiencies.

Specifications

Symbol	Parameter	Value		Unit
		STP4NM60	STD3NM60 STD3NM60-1
VDS	Drain-source Voltage (VGS = 0)	600		V
VDGR	Drain-gate Voltage (RGS = 20 )	600		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuous) at TC = 25	4	3	A
ID	Drain Current (continuous) at TC = 100	52	1.9	A
IDM(`)	Drain Current (pulsed)	6	12	A
PTOT	Total Dissipation at TC = 25	69	42	W
dv/dt(1)	Peak Diode Recovery voltage slope	15		V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	V
Tstg Tj	Operating Junction Temperature Storage Temperature	-65 to 150 -65 to 150

Description

The MDmesh^TM  is a new revolutionary MOSFET technology that associates the Multiple Drain pro-cess with the Company's PowerMESH^TM horizonta layout. The resulting product STP4NM60 has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overal dynamic performance that is significantly better than that of similar completition's products.