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STP50N06L

MOSFET TO-220AB N-CH 60V

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SeekIC No. : 00164875 Detail

STP50N06L: MOSFET TO-220AB N-CH 60V

STP50N06L Data Sheet

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Part Number:
STP50N06L
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.024 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : +/- 15 V
Continuous Drain Current : 50 A
Package / Case : TO-220
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.024 Ohms


Features:

`TYPICAL RDS(on)  =0.024
`AVALANCHERUGGEDTECHNOLOGY
`100%AVALANCHETESTED
`REPETITIVEAVALANCHEDATAAT100
`LOWGATECHARGE
`HIGHCURRENTCAPABILITY
`LOGICLEVELCOMPATIBLEINPUT
`175 OPERATINGTEMPERATURE
`APPLICATIONORIENTED CHARACTERIZATION


Application

·HIGHCURRENT,HIGHSPEEDSWITCHING
·SOLENOIDANDRELAYDRIVERS
·REGULATORS
·DC-DC&DC-ACCONVERTERS
·MOTORCONTROL,AUDIOAMPLIFIERS
·AUTOMOTIVEENVIRONMENT(INJECTION, ABS,AIR-BAG,LAMPDRIVERS,Etc.)


Specifications

Symbol Parameter
Value
Unit
STP50N06L
STP50N06LFI
VDS Drain-source Voltage (VGS =0)
60
V
VDGR Drain-gate Voltage (RGS =20k)
60
V
VGS Gate-sourceVoltage
±15
V
ID Drain Current (continuous)at TC =25
50
27
A
ID Drain Current (continuous)at TC =100
35
19
A
IDM(`) Drain Current(pulsed)
200
200
A
Ptot Tota lDissipationatTC =25
150
45
W
Derating Factor
1
0.3
W/
VISO Insulation Withstand Voltage (DC)
-
2000
V
Tstg StorageTemperature
-65 to 175
Tj Max.OperatingJunctionTemperature
175



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