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STP60N06-14

MOSFET RO 511-STP60NE06-16 TO-220 N-CH 60V 60A

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SeekIC No. : 00166492 Detail

STP60N06-14: MOSFET RO 511-STP60NE06-16 TO-220 N-CH 60V 60A

STP60N06-14 Data Sheet

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Part Number:
STP60N06-14
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.012 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.012 Ohms


Features:

`TYPICAL RDS(on)  = 0.012
`AVALANCHE RUGGED TECHNOLOGY
`100% AVALANCHE TESTED
`REPETITIVE AVALANCHE DATA AT 100
`LOW GATE CHARGE
`HIGH CURRENT CAPABILITY
`175  OPERATING TEMPERATURE
`VERY LOW RDS (on)
`APPLICATION ORIENTED CHARACTERIZATION


Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·SOLENOID AND RELAY DRIVERS
·REGULATORS
·DC-DC & DC-AC CONVERTERS
·MOTOR CONTROL, AUDIO AMPLIFIERS
·AUTOMOTIVE ENVIRONMENT (INJECTION,ABS, AIR-BAG, LAMPDRIVERS, Etc.)


Specifications

Symbol Parameter
Value
Unit
STP60N05-14
STP60N06-14
VDS Drain-source Voltage (VGS =0)
50
60
V
VDGR Drain-gate Voltage (RGS =20k)
50
60
V
VGS Gate-sourceVoltage
±20
V
ID Drain Current (continuous)at TC =25
60
A
ID Drain Current (continuous)at TC =100
50
A
IDM(`) Drain Current(pulsed)
240
A
Ptot Tota lDissipationatTC =25
150
W/
Derating Factor
1
VISO Insulation Withstand Voltage (DC)
-
V
Tstg StorageTemperature
-65 to 175
Tj Max.OperatingJunctionTemperature
175



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