STP80NF12

MOSFET N-Ch 120 Volt 80 Amp

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SeekIC No. : 00148347 Detail

STP80NF12: MOSFET N-Ch 120 Volt 80 Amp

floor Price/Ceiling Price

US $ 1.08~1.69 / Piece | Get Latest Price
Part Number:
STP80NF12
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.69
  • $1.35
  • $1.21
  • $1.08
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 120 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 18 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-220
Drain-Source Breakdown Voltage : 120 V
Resistance Drain-Source RDS (on) : 18 mOhms


Application

· HIGH-EFFICIENCY DC-DC CONVERTERS
· UPS AND MOTOR CONTROL



Specifications

Symbol Parameter Value Unit
STB_P_W80NF12 STP80NF12FP
VDS

Drain-source Voltage (VGS = 0)

120 V
VDGR

Drain- gate Voltage (RGS = 20 k)

120 V
VGS

Gate-source Voltage

±20 V
ID(*)

Drain Current (continuous) at Tc = 25

80 80(#) A
ID

Drain Current (continuous) at Tc = 100

60 60(#) A
IDM(•)

Drain Current (pulsed)

320 320(#) A
Ptot

Total Dissipation at Tc = 25

300 45 W

Derating Factor

2.0 0.3 W/

 dv/dt(1)

Peak Diode Recovery voltage slope

10

 V/ns

 EAS (2)

Single Pulse Avalanche Energy

700

 mJ

VISO

Insulation Withstand Voltage (DC)

------

2500

V

Tstg

Storage Temperature

-55 to 175
Tj

Max. Operating Junction Temperature




Description

This MOSFET STP80NF12 series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency,high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.




Parameters:

Technical/Catalog InformationSTP80NF12
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs18 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 4300pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs189nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP80NF12
STP80NF12
497 6743 5 ND
49767435ND
497-6743-5



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