STP80NF55L-06

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 6.5 mOhms


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	55	V
VDGR	Drain- gate Voltage (RGS = 20 k)	55	V
VGS	Gate-source Voltage	±20	V
ID	Drain Current (continuous) at Tc = 25	80	A
ID	Drain Current (continuous) at Tc = 100	57	A
IDM(•)	Drain Current (pulsed)	320	A
Ptot	Total Dissipation at Tc = 25	210	W
	Derating Factor	1.4	W/
EAS(1)	Single Pulse Avalanche Energy	1	J
Tstg	Storage Temperature	-65 to 175
Tj	Max. Operating Junction Temperature	175

Description

This Power MOSFET STP80NF55L-06 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing
reproducibility.

Parameters:

Technical/Catalog Information	STP80NF55L-06
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	6.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	4850pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	136nC @ 5V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP80NF55L 06 STP80NF55L06 497 5898 5 ND 49758985ND 497-5898-5