STP80NF55L-08

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Packaging : Reel
Mounting Style : Through Hole
Continuous Drain Current : 80 A
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.008 Ohms


Application

· SOLENOID AND RELAY DRIVERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC CONVERTERS
· AUTOMOTIVE ENVIRONMENT


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	55	V
VDGR	Drain-gate Voltage (RGS = 20 k)	55	V
VGS	Gate-source Voltage	±16	V
ID(1)	Drain Current (continuous) at Tc = 25 °C	80	A
ID(1)	Drain Current (continuous) at Tc = 100 °C	80	A
IDM()	Drain Current (pulsed)	320	A
Ptot	Total Dissipation at Tc = 25 °C	300	W
	Derating Factor	2	W/°C
dv/dt (2)	Peak Diode Recovery voltage slope	15	V/ns
EAS(3)	Single Pulse Avalanche Energy	870	mJ
Tstg	Storage Temperature	-55 to 175	°C
Tj	Max. Operating Junction Temperature	175

Description

This Power Mosfet STP80NF55L-08 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.