STP80PF55

MOSFET P-Ch 55 Volt 80 Amp

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SeekIC No. : 00150114 Detail

STP80PF55: MOSFET P-Ch 55 Volt 80 Amp

floor Price/Ceiling Price

US $ 1.13~1.79 / Piece | Get Latest Price
Part Number:
STP80PF55
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.79
  • $1.48
  • $1.28
  • $1.13
  • Processing time
  • 15 Days
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  • 15 Days
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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 18 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 18 mOhms


Features:

 TYPICAL RDS(on) = 0.016 W
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED CHARACTERIZATION



Application

 MOTOR CONTROL
DC-DC & DC-AC CONVERTERS



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
55
V
VDGR
Drain- gate Voltage (RGS = 20 k)
55
V
VGS
Gate-source Voltage
±16
V
ID(*)
Drain Current (continuous) at Tc = 25
80
A
ID
Drain Current (continuous) at Tc = 100
57
A
IDM(`)
Drain Current (pulsed)
320
A
Ptot
Total Dissipation at Tc = 25
300
W
Derating Factor
2
W/
dv/dt (1)
Peak Diode Recovery voltage slope
7
V/ns
EAS (2)
Single Pulse Avalanche Energy
1.4
mJ
Tstg
Storage Temperature
-55 to 175
°C
Tj
Max. Operating Junction Temperature
(`) Pulse width limited by safe operating area
(*) Current Limited by Package
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
(1) ISD 40A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25 , ID = 80A, VDD = 40V



Description

This Power MOSFET STP80PF55 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTP80PF55
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs18 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 5500pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs258nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP80PF55
STP80PF55
497 2729 5 ND
49727295ND
497-2729-5



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